| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method.SOLUTION: An etching method according to the embodiment, comprises: a first step of creating a plasma of a first processing gas including a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing device; and a second step of creating the plasma of a second processing gas including the hydrofluorocarbon gas and a nitrogen gas in the processing container. In this method, a plurality of sequences including the first and second steps is performed. In this method, the plasma is subsequently created in an execution period of the first step and the second step. In the second step, a ration of hydrogen gas flowing amount to a second processing gas flowing amount is set to a lower ration in the period just before the execution period of first step and the period just after the execution period of first step.SELECTED DRAWING: Figure 1 |
