发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE SEALED WITH MOLDING RESIN EMPLOYING A STRESS BUFFERING FILM OF SILICONE |
摘要 |
The disclosed is a method of manufacturing a semiconductor device sealed with molding resin. An aluminum interconnection including an aluminum electrode pad is formed on a semiconductor substrate having an element. A silicone ladder polymer expressed by the following general formula is formed on the semiconductor substrate to cover the element. The silicone ladder polymer film is selectively etched by an aromatic organic solvent to expose the surface of the aluminum electrode pad. The temperature of the silicone ladder polymer film is elevated at a temperature elevating rate of 20 DEG C./min or more, and then, the silicone ladder polymer film is cooled at a cooling rate of 20 DEG C./min or more to form a cured stress buffering protective film for buffering a stress applied to the element. <IMAGE> (in the formula, n is an integer which makes the weight-average molecular weight be in the range of 100,000 to 200,000.
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申请公布号 |
US5180691(A) |
申请公布日期 |
1993.01.19 |
申请号 |
US19920827220 |
申请日期 |
1992.01.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ADACHI, ETSUSHI;ADACHI, HIROSHI;MOCHIZUKI, HIROSHI;KANEGAE, HIROZOH |
分类号 |
H01L21/312;H01L21/3205;H01L21/56;H01L21/768;H01L23/29;H01L23/31;H01L23/52;H01L23/522 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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