Quantum device fabrication method

摘要

The present invention is directed to a method of fabricating quantum devices such as quantum boxes and quantum wires measuring as small as several tens of nanometers utilizing selectivity based on crystal plane orientation. A substrate is provided with a surface having an (100) crystal plane orientation. A first layer of a semiconductor material, such as AlGaAs or GaAs, is epitaxially grown on the surface of the substrate as a trapezoid having a (100) crystal plane orientation top surface and a (111)B crystal plane orientation side surface around the top surface. An As2 beam is used for MBE growth of a second layer of GaAs or InGaAs on the (100) surface of the first layer. The growth of the third layer on the (111)B crystal plane orientation region is prevented by an As trimer structure such that growth only takes place at the (100) crystal plane orientation region.