| 摘要 |
PURPOSE:To provide a light emitting diode array chip capable of high-density integration of light emitting elements without light emitting property dropping even in an endmost light emitting part by suppressing the separation of an insulating film at dicing. CONSTITUTION:An insulating film 12, which has a projection 12 extending outward of a chip in the vicinity of an endmost light emitting part 23, is made on an epitaxial wafer where an epitaxial layer is grown on a substrate 1. A p-type region to serve as a light emitting part is formed by diffusing p-type impurities into the epitaxial layer through the window of the insulating film 12. The projection is diced precedently in the opposite direction, and then it is diced into individual chips. Hereby, the force of seeking to strip off the insulating film 12 by precedent dicing becomes residual stress, and lightens the reverse force of seeking to strip off the insulating film 12 generated at dicing of a chip. Therefore, in individual chips being cut out, the separation of the insulating film 12 is restrained. |
