发明名称 Semiconductor laser with integral spatial mode filter
摘要 A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts.
申请公布号 US5392308(A) 申请公布日期 1995.02.21
申请号 US19930001735 申请日期 1993.01.07
申请人 SDL, INC. 发明人 WELCH, DAVID F.;MEHUYS, DAVID G.;SCIFRES, DONALD R.
分类号 H01S3/081;H01S3/23;H01S5/026;H01S5/042;H01S5/0625;H01S5/065;H01S5/10;H01S5/12;H01S5/125;H01S5/14;H01S5/18;H01S5/187;H01S5/20;H01S5/40;H01S5/50;(IPC1-7):H01S3/19 主分类号 H01S3/081
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