发明名称 |
Insulated gate bipolar transistor having high short-circuit and latch-up withstandability |
摘要 |
An IGBT has an emitter bypass structure. The interval D between N emitter regions is adapted to be larger than two times of a channel length L in order to effectively decrease a channel width to effectively decrease a saturation current. A high concentration region may be provided in a P base region, which is closer to the end portion of the P base region than the emitter regions between the emitter regions, so that the channel width can be effectively decreased even without the relation of D>2L. A channel width per unit area WU may be in a range of 140 cm-1</=WU</=280 cm-1 in an IGBT of a breakdown voltage class of 500-750 V or 70 cm-1</=WU</=150 cm-1 in an IGBT of a breakdown voltage class of 1000-1500 V, so that an IGBT having a short-circuit withstandability and a latch-up withstandability suitable for an inverter can be implemented.
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申请公布号 |
US5391898(A) |
申请公布日期 |
1995.02.21 |
申请号 |
US19920926378 |
申请日期 |
1992.08.10 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HAGINO, HIROYASU |
分类号 |
H01L29/68;H01L29/06;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L29/74;H01L31/111;H01L23/58;H01L29/76 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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