| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad capable of reducing dishing and a polishing method using the same in the polishing of the semiconductor wafer of a metal damascene structure. <P>SOLUTION: In the polishing pad for polishing a surface of a semiconductor device or a precursor thereto, and for planarizing metal damascene structures on a semiconductor wafer, a polishing layer of the pad has a hardness of about 40-70 Shore D, a tensile modulus of about 100-2,000 MPa at 40°C, and an E' ratio at 30-90°C of about 1-5. Further, each linear dimension of the pad changes by less than about 1% and the hardness of the pad decreases by less than about 30% when the pad is immersed in deionized water for 24 hours at an ambient temperature of about 25°C. <P>COPYRIGHT: (C)2009,JPO&INPIT |
