EPROM in double poly high density CMOS

摘要

A method of making an EPROM transistor in a high density CMOS integrated circuit having a poly to poly capacitor and including two layers of polysilicon. The EPROM transistor is made using only the steps used to make the other components of the high density CMOS integrated circuit. The EPROM transistor is programmable at the low voltages which high density CMOS transistors can handle.