| 摘要 |
The present invention provides a semiconductor integrated circuit device in which its internal node can be precharged at a high speed while suppressing current dissipation as in a conventional device by adding a circuit which assists charging when a power supply voltage begins to rise and a method for precharging. The semiconductor integrated circuit device includes a precharge circuit which comprises a first charge circuit, a second charge circuit which is higher in charging speed than the first charge circuit, a charged level detect circuit for detecting the charged level of the internal node when the first charge circuit is being driven, and a charged level stabilization circuit. The precharge circuit may further comprise a charged level control circuit. Although, in a conventional circuit, charging of the internal node is effected by only the first charge circuit which has high resistivity and low driving capability, in the present invention the second charge circuit which is high in driving capability is used to assist the first charge circuit to charge the node after the charged level of the node by the first charge circuit has reached a predetermined level. Thus, the precharging time of a function switching circuit can be reduced.
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