| 摘要 |
PURPOSE: A method for manufacturing a pad of a semiconductor device is provided to increase an integration degree by the difference between areas of a pad and a metal interconnection, by forming the pad having a relatively broader area than a conventional technology on a different plane than that of the metal interconnection. CONSTITUTION: The first insulation layer(2) is deposited on a substrate(1) having a semiconductor device. A contact hole is formed in the first insulation layer to expose a specific region of the semiconductor device while the metal interconnection(3) connected to the exposed region is formed. The second insulation layer(4) is deposited on the metal interconnection the first insulation layer. A contact hole is formed in the second insulation layer to selectively expose the metal interconnection to which the pad(6) is to be connected, and a plug(5) is formed in the contact hole. Metal is deposited on the entire surface, and is patterned to form the pad located on the entire surface of the plug and the insulation layer in the periphery of the plug.
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