| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of controlling a breakdown voltage to be the desired breakdown voltage by changing a design rule concerning the semiconductor device composed of a transistor with a MOS structure, and to provide its manufacturing method. SOLUTION: The semiconductor device having the MOS structure includes: a channel dope layer, and an impurity layer which is arranged adjacent to the channel dope layer so as to form a drain. The breakdown voltage is set to the prescribed breakdown voltage by controlling the superimposition of the impurity layer on the channel dope layer. COPYRIGHT: (C)2008,JPO&INPIT
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