| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with which much etching residues can be removed as generated at the time of forming a contact hole. SOLUTION: In the manufacturing method of the semiconductor device; a silicon substrate 10 is prepared, an insulating film 20 is deposited on the silicone substrate, and the insulating film is etched. Thus, the contact hole 30 reaching the silicon substrate is formed. The etching residues 50 remaining in a base of the contact hole is removed by using a silicon etching process and a silicon oxide film etching process. COPYRIGHT: (C)2008,JPO&INPIT
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