| 摘要 |
A word line driver of a semiconductor memory apparatus is provided to improve the performance of the semiconductor memory apparatus by accelerating enabling time of a word line rather than the conventional word line driving circuit. A driving unit(200) enables a word line selection signal generation unit(10) when all of a first driving signal and a second driving signal are enabled. A voltage supply unit(300) supplies a voltage to the driving unit when the second driving signal is disabled. The word line selection signal generation unit enables a word line selection signal in response to a precharge signal and an address signal if the word line selection signal generation unit is disabled by the driving unit.
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