| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element, in which the propagation of dislocations to a drive (main light emission) region of a nitride semiconductor layer and the occurrence of tensile strain are suppressed, and to provide a manufacturing method thereof. SOLUTION: The nitride semiconductor laser element comprises a nitride semiconductor substrate 100 and a nitride semiconductor layer laid thereon. The nitride semiconductor substrate 100 comprises a high dislocation density region and a low dislocation density region, and has a recess formed in at least the high dislocation density region. The nitride semiconductor layer comprises a first nitride semiconductor layer 110, in which the grown film thickness in the lateral direction from side faces of the recess in the substrate is greater than the grown film thickness in the heightwise direction from a region other than the recess, and a second nitride semiconductor layer 120 that is disposed on the first nitride semiconductor layer 110 and contains indium. The first nitride semiconductor layer 110 and the second nitride semiconductor layer 120 have a recess over the recess in the nitride semiconductor substrate 100. COPYRIGHT: (C)2008,JPO&INPIT
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