| 摘要 |
PROBLEM TO BE SOLVED: To reduce a polishing process and have a fine gate space pattern on an element separating area. SOLUTION: The semiconductor device includes a semiconductor substrate 100, an element separating dielectric film 101, a first and second electrodes 107a, 107b, a gate dielectric film pattern 104, and a side-wall dielectric film 108. The element separating dielectric film 101 is located on the semiconductor substrate 100, and the first and second electrodes 107a, 107b are located on the element separating dielectric film 101 so as to sandwich the gate dielectric film pattern 104. The side-wall dielectric film 108 is located on a portion except the portion adjacent to the gate dielectric film pattern 104 among the side-walls of the first and second electrodes 107a, 107b. COPYRIGHT: (C)2008,JPO&INPIT
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