| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacitor in which a bore diameter can be enlarged sufficiently by preventing a short circuit between capacitors even under such conditions as a sufficient inter-capacitor distance cannot be obtained. SOLUTION: The manufacturing method of a semiconductor device having a cylinder type capacitor structure comprises a step for forming a sacrifice film (104) on a semiconductor substrate, a step for providing a gap (106) between the sacrifice films by etching (104') the sacrifice film into cylinder shape, a step for forming a cylinder insulating film (107) in the gap between the sacrifice films, a step for forming a cylinder hole (108) by removing the sacrifice film selectively, a step for forming a lower electrode on the inner wall and the bottom of the cylinder hole, a step for forming a capacitor insulating film on the entire surface, and a step for forming an upper electrode on the entire surface. COPYRIGHT: (C)2008,JPO&INPIT
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