| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for producing a silicon carbide single crystal that can improve the in-plane temperature uniformity of a crucible.SOLUTION: A silicon carbide single crystal production device 100 includes a crucible 5, a first resistance heater 1, a second resistance heater 2, and a first support part 4a. The crucible 5 has a top surface 5a1, a bottom surface 5b2 opposite to the top surface 5a1, and a cylindrical side surface 5b1 located between the top surface 5a1 and the bottom surface 5b2. The first resistance heater 1 is installed so as to face the bottom surface 5b2. The second resistance heater 2 is configured to enclose the side surface 5b2. The first support part 4a supports the crucible 5 so that the bottom surface 5b2 is separated from the first resistance heater 1 and so that the side surface 5b1 is separated from the second resistance heater 2. The first support part 4a is brought into contact with at least one of the top surface 5a1 and side surface 5b1.SELECTED DRAWING: Figure 1 |
