发明名称 |
Device comprising a spring and an element suspended thereon, and method for manufacturing same |
摘要 |
The invention relates to an MEMS structure with a stack made of different layers and a spring-and-mass system varying in its thickness which is formed of the stack, and wherein, starting from a back side of the stack and the substrate, at laterally different positions, the substrate while leaving the first semiconductor layer, or the substrate, the first etch-stop layer and the first semiconductor layer are removed, and to a method for manufacturing such a structure. |
申请公布号 |
US9399573(B2) |
申请公布日期 |
2016.07.26 |
申请号 |
US201414280154 |
申请日期 |
2014.05.16 |
申请人 |
Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. |
发明人 |
Gu-Stoppel Shanshan;Quenzer Hans Joachim;Hofmann Ulrich |
分类号 |
H01L29/84;B81B3/00;B81C1/00 |
主分类号 |
H01L29/84 |
代理机构 |
Perkins Coie LLP |
代理人 |
Perkins Coie LLP ;Glenn Michael A. |
主权项 |
1. A method for manufacturing an MEMS structure with a stack of material thicknesses, comprising:
providing a stack of a substrate, a first etch-stop layer, a first semiconductor layer, a second etch-stop layer and a second semiconductor layer which are arranged one above the other in the order mentioned; implementing a spring-and-mass system formed in the stack and varying in its thickness, comprising at least one spring and an element suspended via the spring by: removing:
the substrate while leaving the first semiconductor layer; andthe substrate, the first etch-stop layer and the first semiconductor layer, at laterally different positions, starting from a back side of the substrate facing away from a first etch-stop layer; wherein providing the stack comprises: arranging the first or the second etch-stop layer such that the first or second etch-stop layer comprises a layer thickness varying over a lateral extension of the stack; and arranging the first or second semiconductor layer such that the main side of the first or second semiconductor layer facing away from the substrate forms a planar surface. |
地址 |
Munich DE |