发明名称 Device comprising a spring and an element suspended thereon, and method for manufacturing same
摘要 The invention relates to an MEMS structure with a stack made of different layers and a spring-and-mass system varying in its thickness which is formed of the stack, and wherein, starting from a back side of the stack and the substrate, at laterally different positions, the substrate while leaving the first semiconductor layer, or the substrate, the first etch-stop layer and the first semiconductor layer are removed, and to a method for manufacturing such a structure.
申请公布号 US9399573(B2) 申请公布日期 2016.07.26
申请号 US201414280154 申请日期 2014.05.16
申请人 Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. 发明人 Gu-Stoppel Shanshan;Quenzer Hans Joachim;Hofmann Ulrich
分类号 H01L29/84;B81B3/00;B81C1/00 主分类号 H01L29/84
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP ;Glenn Michael A.
主权项 1. A method for manufacturing an MEMS structure with a stack of material thicknesses, comprising: providing a stack of a substrate, a first etch-stop layer, a first semiconductor layer, a second etch-stop layer and a second semiconductor layer which are arranged one above the other in the order mentioned; implementing a spring-and-mass system formed in the stack and varying in its thickness, comprising at least one spring and an element suspended via the spring by: removing: the substrate while leaving the first semiconductor layer; andthe substrate, the first etch-stop layer and the first semiconductor layer, at laterally different positions, starting from a back side of the substrate facing away from a first etch-stop layer; wherein providing the stack comprises: arranging the first or the second etch-stop layer such that the first or second etch-stop layer comprises a layer thickness varying over a lateral extension of the stack; and arranging the first or second semiconductor layer such that the main side of the first or second semiconductor layer facing away from the substrate forms a planar surface.
地址 Munich DE