SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device (1) is provided with a substrate (2a), a semiconductor element (3), a ground pad (10), an insulation covering member (13), an electroconductive joining member (12), and an electroconductive cap (4). The insulation covering member (13) exposes the outer periphery of the ground pad (10) and covers the inner periphery of the ground pad (10), and is provided such that a step is formed from the ground pad (10) to the substrate (2a). The electroconductive joining member (12) is disposed on the outer periphery of the ground pad (10). The electroconductive cap (4) is joined to the ground pad (10) by the electroconductive joining member (12) so as to cover the semiconductor element (3). The inner-peripheral end of the bottom part (BP) of the electroconductive cap (4) is disposed further toward the inner periphery than is the outer-peripheral end of the insulation covering member (13). The bottom part (BP) is shaped so that there is a continual decrease from the outer-peripheral end to the inner-peripheral end in the distance to a principal surface (S1) .