发明名称 Low power memory controller that is adaptable to either double data rate DRAM or single data rate synchronous DRAM circuits
摘要 A memory controller is provided and a method for transferring data between the memory controller and a memory device. The memory controller can be implemented on an integrated circuit that also contains an execution unit. The execution unit can be clocked at a first clock rate, whereas the memory controller can be selectively clocked at either the first clock rate or a second clock rate that is approximately one-half frequency of the first clock rate. By clocking the memory controller at either the first clock rate or the second clock rate, the memory controller can accommodate different types of semiconductor memory. For example, the memory controller can control single data rate (SDR) DRAM memory if it is clocked at a first clock rate. Conversely, the memory controller can control double data rate (DDR) DRAM memory if it is clocked at approximately one-half the first clock rate. By selectively clocking the memory controller at different clocking rates, the memory controller need not be modified in hardware, yet can accommodate different memory devices by allowing a user to simply plug one type of memory into a receptacle rather than another depending on the cost constraints and user application. Therefore, the memory controller is adaptable during a power-on reset in which the computer system is initialized to automatically receive and control different types of memory selected by a user.
申请公布号 US7243254(B1) 申请公布日期 2007.07.10
申请号 US20030701639 申请日期 2003.11.05
申请人 LSI CORPORATION 发明人 KUROODI VIJENDRA;DESAI GEETA;HUNG ERIC
分类号 G06F1/04 主分类号 G06F1/04
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