Surface emission type semiconductor laser with optical detector, method of manufacturing thereof, and sensor using the same

摘要

A surface emission type semiconductor laser having an optical detector which can satisfactorily assure both the laser emission characteristics of the photoemitter and the optical-to-electrical conversion efficiency. The laser comprises a first conducting semiconductor layer and a second conducting semiconductor layer formed on first and second regions of a semiconductor substrate. Over the second conducting semiconductor layer on the first region is formed an optical resonator which emits light perpendicular to the plane of the semiconductor substrate. On the second region, at least one photodiode is formed by the first and second conducting semiconductor layers. On the first region the second conducting semiconductor layer is formed with a thickness of at least 1 mu m, and is used as a lower electrode for supplying a current to the optical resonator. On the second region, the second conducting semiconductor layer forming the at least one photodiode is formed with a thickness of less than 1 mu m after etching . The device can be used in a pressure sensor or in a position or displacement sensor. <IMAGE>