| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a small cold-cathode tube having improved conductivity on the surface and an improved electron emission characteristic by using a diamond for a protruded cold cathode, and insulating the cold cathode from a control electrode via a thermally nitrified Si layer. SOLUTION: An n-type Si layer 13 is formed on the surface of a p-type Si layer 12 by doping, a pyramid type opening section is formed by etching, it is covered with a thermally oxidized Si layer 2, the surface is thermally nitrified, and a die inner wall is converted into a thermally nitrified Si layer 4. A diamond layer 1 is filled in a die by the hot filament CVD method, and a Ti layer 5 and a Cu layer 6 are deposited in sequence on this film surface. A Ni layer is deposited on a glass substrate 9 and covered with a solder layer 7, it is connected to a substrate formed with a diamond by soldering, only the p-type region of the Si die is selectively removed by electrochemical etching to form a control electrode opening section, the thermally oxidized Si layer 2 and the thermally nitrified Si layer 4 are removed in sequence to expose a cold-cathode tip section 10, and a cold-cathode tube with a control electrode is obtained.</p> |
