Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures

摘要

Semiconductor structures, and methods for fabricating semiconductor structures, comprising high dielectric constant stacked structures are provided. A stacked dielectric structure ( 16 ) in accordance with one exemplary embodiment of the present invention has a first amorphous dielectric layer ( 18 ) comprising Hf_XZr_1-XO₂, where 0<=X<=1. An amorphous interlayer ( 20 ) overlies the first amorphous dielectric layer. The interlayer has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO₄. A second amorphous dielectric layer ( 22 ) overlies the interlayer. The second amorphous dielectric layer comprises Hf_YZr_1-YO₂, where 0<=Y<=1. The stacked dielectric structure ( 16 ) has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO₄.