| 摘要 |
A diffusion barrier layer 40 for a semiconductor device is fabricated by forming an amorphous or microcrystalline layer 40 containing a refractory metal material , preferably Ta, and an insulating material, preferably CeO 2 , and subsequently annealing, preferably at 450-800‹C for at least ten minutes. The diffusion barrier layer may be formed in a contact hole 30 formed in an insulating layer 20. The barrier layer may be sputter deposited using either a single target of the refractory metal and the insulating material or using two separate targets. The layer may also be formed by chemical vapour deposition. |
