发明名称 |
Method of planarize and improve the effectiveness of the stop layer |
摘要 |
A method of manufacturing a semiconductor device including a step of filling crevices or non-level regions formed during the manufacture of the semiconductor device with a spin-on dielectric material. The spin-on dielectric material prevents conductive material from filling the crevices and causing the device to fail.
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申请公布号 |
US6025272(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19980161879 |
申请日期 |
1998.09.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU, ALLEN S.;SCHOLER, THOMAS C.;STEFFAN, PAUL J. |
分类号 |
H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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