发明名称 Method of planarize and improve the effectiveness of the stop layer
摘要 A method of manufacturing a semiconductor device including a step of filling crevices or non-level regions formed during the manufacture of the semiconductor device with a spin-on dielectric material. The spin-on dielectric material prevents conductive material from filling the crevices and causing the device to fail.
申请公布号 US6025272(A) 申请公布日期 2000.02.15
申请号 US19980161879 申请日期 1998.09.28
申请人 ADVANCED MICRO DEVICES, INC. 发明人 YU, ALLEN S.;SCHOLER, THOMAS C.;STEFFAN, PAUL J.
分类号 H01L21/768;(IPC1-7):H01L21/00 主分类号 H01L21/768
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