| 摘要 |
An interconnection pattern made of an aluminum alloy, such as Al-Cu, on a semiconductor IC, is dry etched in an etching gas containing a chlorine component. A photo resist stripping process is carried out at a location down stream of the etching process using a conventional stripping gas, such as CF4+02, at room temperature. Before the resist-stripped substrate is exposed to open air, the substrate is heated in a vacuum to a temperature above 100° C., to remove residual chlorine components.
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