RESISTLESS LITHOGRAPHY METHOD FOR PRODUCING FINE STRUCTURES

摘要

A resistless lithography method for fabricating fine stiuctures is disclosed. IN an embodiment, a semiconductor mask layer (HM) may be formed on a carrier material (TM, HM') and a selective ion implantation (I) being effected in order to dope selected regions ( 1 ) of the semiconductor mask layer (HM). Wet chemical removal of the non doped regions of the semiconductor mask layer (HM) yields a semiconductor mask which can be used for further patterning. A simple and high precision resistless lithography method for structures smaller than 100 nm is obtained in this way.