| 发明名称 |
Memory array including isolation between memory cell and dummy cell portions |
| 摘要 |
A semiconductor memory device structure includes an isolation region formed along an edge of a memory cell portion adjacent to a dummy cell portion to isolate the memory cell portion from leakage current generated in the dummy cell portion.
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| 申请公布号 |
US7183608(B2) |
申请公布日期 |
2007.02.27 |
| 申请号 |
US20050137476 |
申请日期 |
2005.05.26 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUANG LAN-TING;LIU CHEN-CHIN;LIU CHENG JYE |
| 分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
| 代理机构 |
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