发明名称 VAPOR TREATMENT PROCESS AND ITS APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a vapor treatment process which necessitates no complex partition mechanism at the entrance and exit of a material to be treated, reduces the supply amount of an inert gas to be supplied into the tank, and to provide an apparatus therefor. SOLUTION: In the vapor treatment apparatus which inserts a substrate 18 of the material to be treated into the tank 10 filled with IPA vapor 24 and conducts the treatment by removing the moisture attached to the surface of the substrate 18, the apparatus is provided with a gas supply device 26 to supply nitrogen gas into the tank 10 when the substrate 18 is inserted and a controlling device 34 to control the flow rate of the nitrogen gas supplied into the tank 10 from the gas supply device 26 in accordance with the thermal load of the substrate 18. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007216144(A) 申请公布日期 2007.08.30
申请号 JP20060039708 申请日期 2006.02.16
申请人 HITACHI PLANT TECHNOLOGIES LTD 发明人 SAWARA TERUTAKA;TSUMAKI NOBUO;KITADA YOSHIMITSU
分类号 B08B3/08;F26B21/14 主分类号 B08B3/08
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