| 摘要 |
A method for manufacturing a wafer is provided to eliminate pit defects in a DSP(Double Side Polishing) process by performing a wet etching process after the DSP process. Silicon single crystal ingot is cut in a wafer shape, and then a surface of the silicon single crystal is ground to improve the flatness of the silicon single crystal. A primary polishing process is performed on the ground silicon single crystal, and then a wet etching process is performed on the silicon crystal to remove surface defects remaining after the grinding and the primary polishing process. A secondary polishing process is performed on the surface of the silicon single crystal.
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