发明名称 |
PATTERNING DURING FILM GROWTH |
摘要 |
The growing surface of a material such as InGaN is exposed to a small diameter laser beam that is directed to controlled locations, such as by scanning mirrors. Material characteristics may be modified at the points of exposure. In one embodiment, mole fraction of selected material is reduced where laser exposure takes place. In one embodiment, the material is grown in a MBE or CVD chamber. |
申请公布号 |
WO2008045130(A3) |
申请公布日期 |
2008.07.17 |
申请号 |
WO2007US04068 |
申请日期 |
2007.02.16 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC.;SCHAFF, WILLIAM J.;CHEN, XIAODONG |
发明人 |
SCHAFF, WILLIAM J.;CHEN, XIAODONG |
分类号 |
C23C16/04 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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