发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND FABRICATING METHOD THEREOF, AND FLAT PANEL DISPLAY WITH THE SAME
摘要 <p>A thin film transistor array panel and a fabricating method thereof, and a flat panel display with the same are provided to improve the electrical characteristic of the thin film transistor by filling the organic semiconductor in the hole in the bank exposing the source electrode and drain electrode. A thin film transistor array panel comprises a substrate(110), a gate line, a gate insulating layer(140), a data line(171), a source electrode(173), a drain electrode(175), a bank(146), a semiconductor(154), a protective film(180) and a pixel electrode. The gate insulating layer is arranged on the gate line while containing the fluorine element. The source electrode is connected to the data line. The drain electrode is arranged on the top of the substrate in order to face the source electrode. The bank is arranged on the source and drain electrodes in order to having the hole exposing the source and drain electrodes.</p>
申请公布号 KR20090022693(A) 申请公布日期 2009.03.04
申请号 KR20070088268 申请日期 2007.08.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, TAE YOUNG;KIM, YOUNG MIN
分类号 H01L29/786 主分类号 H01L29/786
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