NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

A nonvolatile semiconductor memory is provided to prevent the deterioration of performance of the peripheral transistor even if the dielectric film of the control gate between the electrode and charge storage layer is formed with the high dielectric constant material. The memory cell comprises the floating gate electrode(8) and the control gate electrode(11). The floating gate electrode is positioned on the first channel area between the first and the second diffusion layer. The control gate electrode is positioned to interpose the inter-the first electrode insulating layer(10) on the floating gate electrode. The peripheral transistor comprises the bottom electrode(17) and upper electrode(19). The bottom electrode is positioned on the second channel region between the third and the fourth diffusion layer. The insulating layer between the first and the second electrode comprise the high dielectric constant material.