OTP memory cell and fabricating method thereof

摘要

A one-time programmable (OTP) memory cell is provided, which includes: a well of a first conductivity type; a gate insulating layer formed on the well and including first and second fuse regions; a gate electrode of a second conductivity type formed on the gate insulating layer, the second conductivity type being opposite in electric charge to the first conductivity type; a junction region of the second conductivity type formed in the well and arranged to surround the first and second fuse regions; and an isolation layer formed in the well between the first fuse region and the second fuse region.

主权项

1. A method for forming a one-time programmable (OTP) memory cell, the method comprising:
forming an isolation layer in a first conductivity type well; forming a gate insulating layer and a gate electrode on the well, wherein the gate insulating layer comprises a capacitor region, a first fuse projection region, and a second fuse projection region; and exposing an upper portion of the well to ions of a second conductivity type to form a junction region that surrounds the first fuse projection region and the second fuse projection region, wherein the isolation layer is formed in the well between the first fuse projection region and the second fuse projection region.