| 摘要 |
PROBLEM TO BE SOLVED: To separate a layer including a semiconductor element using an oxide semiconductor layer from a substrate used in manufacturing.SOLUTION: A semiconductor device manufacturing method comprises: forming a peeling layer composed of a nitride semiconductor on a substrate; forming a ground layer on the peeling layer; forming an oxide semiconductor layer on the ground layer to form a semiconductor element having the oxide semiconductor layer; irradiating laser beams on the peeling layer and separating the substrate from the semiconductor element to form a semiconductor device without including the substrate. The peeling layer is a layer for decomposition by laser beams, which is typically a gallium nitride layer. A single crystal oxide semiconductor layer may be formed by crystallization of the oxide semiconductor layer by a heat treatment. By connecting and alternately stacking semiconductor devices including the oxide semiconductor layers and semiconductor devices manufactured from semiconductor substrates, a three-dimensionally integrated semiconductor device is manufactured. |
