| 摘要 |
PROBLEM TO BE SOLVED: To improve a mechanical strength of a region in an imaging apparatus including a back-illuminated CMOS sensor where an electrode pad is installed.SOLUTION: In a region around a chip forming region TFR including a photodiode PD, a groove-shaped through-hole TH3 for passing through a silicon layer SOI and a first interlayer insulating film IL1 is formed. A wall-shaped conductive penetration part TB1 corresponding to the groove-shaped through-hole TH3 is formed in the groove-shaped through-hole TH3. An electrode pad PAD is in contact with the wall-shaped conductive penetration part TB1 and is electrically connected to first wiring M1 and the like via the wall-shaped conductive penetration part TB1.SELECTED DRAWING: Figure 2 |
