发明名称 |
HIGH PURITY POLYSILOCARB DERIVED SILICON CARBIDE MATERIALS, APPLICATIONS AND PROCESSES |
摘要 |
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. |
申请公布号 |
US2016207783(A1) |
申请公布日期 |
2016.07.21 |
申请号 |
US201514864162 |
申请日期 |
2015.09.24 |
申请人 |
MELIOR INNOVATIONS, INC. |
发明人 |
Hopkins Andrew R.;Diwanji Ashish P.;Sherwood Walter J.;Dukes Douglas M.;Sandgren Glenn;Land Mark S.;Benac Brian L. |
分类号 |
C01B31/36;C23C16/32 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
1. A high purity polymer derived ceramic SiC composition, the composition comprising:
a. an SiC4 configuration; b. the composition defining a surface, wherein the composition surface is resistant to oxidation under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer at standard ambient temperature and pressure; and, c. wherein the composition is substantially free from impurities, whereby total impurities are less than 1 ppm. |
地址 |
Houston TX US |