发明名称 HIGH PURITY POLYSILOCARB DERIVED SILICON CARBIDE MATERIALS, APPLICATIONS AND PROCESSES
摘要 Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
申请公布号 US2016207783(A1) 申请公布日期 2016.07.21
申请号 US201514864162 申请日期 2015.09.24
申请人 MELIOR INNOVATIONS, INC. 发明人 Hopkins Andrew R.;Diwanji Ashish P.;Sherwood Walter J.;Dukes Douglas M.;Sandgren Glenn;Land Mark S.;Benac Brian L.
分类号 C01B31/36;C23C16/32 主分类号 C01B31/36
代理机构 代理人
主权项 1. A high purity polymer derived ceramic SiC composition, the composition comprising: a. an SiC4 configuration; b. the composition defining a surface, wherein the composition surface is resistant to oxidation under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer at standard ambient temperature and pressure; and, c. wherein the composition is substantially free from impurities, whereby total impurities are less than 1 ppm.
地址 Houston TX US