| 发明名称 |
Semiconductor device and method of manufacturing semiconductor device |
| 摘要 |
A semiconductor device includes a semiconductor substrate containing Si as a main component, and an active element formed on the semiconductor substrate and including an insulating metal silicide thin film formed on the semiconductor substrate, dangling bonds of Si of the semiconductor substrate being terminated by the insulating metal silicide thin film.
|
| 申请公布号 |
US7115953(B2) |
申请公布日期 |
2006.10.03 |
| 申请号 |
US20050049661 |
申请日期 |
2005.02.04 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMIZU TATSUO;YAMAGUCHI TAKESHI;NISHIKAWA YUKIE |
| 分类号 |
H01L21/322;H01L29/72;H01L21/28;H01L21/316;H01L21/336;H01L29/49;H01L29/51;H01L29/76;H01L29/78 |
主分类号 |
H01L21/322 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
