| 摘要 |
The present invention relates to a P-P electrode type light emitting diode and an N-N electrode type light emitting diode. The P-P electrode type light emitting diode according to the present invention includes an active layer, and an N-type semiconductor layer and a P-type semiconductor layer formed on both sides of the active layer, respectively. The P-type semiconductor layer is divided into a first P-type region operating as a P-type semiconductor and a second P-type region to which a negative critical bias is applied such that a breakdown occurs therein. When positive (+) power is applied to the first P-type region and negative (-) power is applied to the second P-type region, light is emitted from the active region between the first P-type region and the N-type semiconductor layer. Thus, an etching process for exposing the N-type semiconductor layer may be omitted so that process efficiency is improved and in addition, an error which may occur in the etching process is fundamentally prevented. |
