| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a channel resistance, and to inhibit an on resistance at a low value in a semiconductor element with a silicon carbide layer. <P>SOLUTION: A semiconductor device has: a gate insulating film 17 and a source electrode 18 formed on the silicon carbide layer 10; a gate electrode 19; and a well region 13 formed to the silicon carbide layer 10. The semiconductor device further has: a first conductivity type source region 14 formed inside the well region 13 and brought into contact electrically with the source electrode 18; and a first conductivity type high-resistance region 12 composed of a section, to which the well region 13 in the silicon carbide layer 10 is not formed. The section, to which the source region 14 in the well region 13 is not formed, is formed in a second conductivity type, and an angle α formed by the side face A of the well region 13, and a plane parallel with the surface of the silicon carbide layer 10, is larger than that β formed by the side face B of the source region 14 and the plane parallel with the surface of the silicon carbide layer 10 on a cross section along the channel direction of the well region 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
