Semiconductor process and fin-shaped field effect transistor

摘要

A semiconductor process includes the following steps. A fin on a substrate is provided. Spacers are formed only on sidewalls of the fin, where a top surface of the fin is higher than or equal to top surfaces of the spacers. An epitaxial structure is formed on the fin. The present invention also provides a fin-shaped field effect transistor including a fin, spacers and an epitaxial structure. The fin is located on a substrate. The spacers are disposed only on sidewalls of the fin, where a top surface of the fin is higher than or equal to top surfaces of the spacers. The epitaxial structure is disposed on the fin.

主权项

1. A semiconductor process, comprising:
providing a fin on a substrate; and forming spacers only on sidewalls of the fin, wherein a top surface of the fin is higher than or equal to top surfaces of the spacers, and a part of the substrate beside the fin is not covered by the spacers while the spacers are formed and the fin is exposed; and forming an epitaxial structure on the fin.