Proximity switch fabrication method using angled deposition

摘要

A method involves applying a voltage to a first conductive surface and a second conductive surface separated by a conductive surface gap of a distance greater than the distance required to produce a tunneling current between the first and second conductive surfaces when the voltage is applied, and using angled deposition to deposit conductive material on the first and second conductive surfaces to narrow the conductive surface gap until a tunneling current appears across the first and second conductive surfaces responsive to the applied voltage.

主权项

1. A method comprising the steps of:
applying a voltage of less than 50V to a first conductive surface and a second conductive surface separated by a conductive surface gap of a distance greater than the distance required to produce a tunneling current between the first and second conductive surfaces when the voltage is applied, wherein the first conductive surface is disposed on a first insulator layer section disposed on a substrate and the second conductive surface is disposed on a second insulator layer section disposed on the substrate, wherein the first insulator layer section and the second insulator layer section are separated by an insulator layer gap aligned with the conductive surface gap, wherein the insulator layer gap exposes a portion of the substrate; and using angled deposition to deposit conductive material on the first and second conductive surfaces to narrow the conductive surface gap until a tunneling current appears across the first and second conductive surfaces responsive to the applied voltage, wherein the width of the conductive surface gap when the tunneling current appears is between 1 nm and 50 nm, wherein the step comprises rotating the substrate about an axis until the first insulator layer section is at a first angle with respect to a deposition source, depositing a first metal layer over at least a portion of the first insulator layer section proximate to the insulator layer gap, wherein an edge of the first metal layer over the first insulator layer section angles downward from a distal end towards the substrate, rotating the substrate about the axis until the second insulator layer section is at a second angle with respect to the deposition source, and depositing a first metal layer over at least a portion of the second insulator layer section proximate to the insulator layer gap, wherein an edge of the first metal layer over the second insulator layer section angles downward from a distal end towards the substrate, wherein a metal layer gap is formed between the edge of the first metal layer over the first insulator layer section and the edge of the first metal layer over the second insulator layer section, wherein the exposed portion of the substrate remains substantially exposed.