发明名称 Integrated circuit cooling apparatus
摘要 A chip fabricated from a semiconductor material is disclosed, which may include active devices located below a first depth from the chip back side, and a structure to remove heat from the active devices to the chip back side. The structure may include thermally conductive partial vias (TCPVs), which may include a recess with a depth, from the chip back side towards the active devices less than the first depth. Each TCPV may include a barrier layer deposited within the recess and deposited upon the back side of the chip. Each TCPV may also include a thermally conductive layer deposited upon the barrier layer. The structure may also include through-silicon vias (TSVs) electrically connected to active devices, extending from the back side to an active device side of the chip to conductively remove heat from the active devices to the back side of the chip.
申请公布号 US9472483(B2) 申请公布日期 2016.10.18
申请号 US201514802341 申请日期 2015.07.17
申请人 International Business Machines Corporation 发明人 Gambino Jeffrey P.;Graf Richard S.;Mandal Sudeep;Ventrone Sebastian T.
分类号 H01L23/34;H01L23/367;H01L23/48;H01L23/373;H01L21/768;H01L21/48;H01L25/00;H01L25/065;H01L21/56 主分类号 H01L23/34
代理机构 代理人 Bowman Nicholas D.
主权项 1. A chip fabricated from a semiconductor material, the chip comprising: a plurality of active devices located below a first depth from a back side of the chip; and a structure configured to remove, by conduction from the plurality of active devices to the back side, heat from the chip, the structure including: a plurality of thermally conductive partial vias (TCPVs), each TCPV of the plurality of TCPVs being electrically insulated from the plurality of active devices and having: a recess with a second depth, from the back side towards the plurality of active devices, that is less than the first depth;a barrier layer deposited within at least a portion of the recess and deposited upon at least a portion, adjacent to the recess, of the back side of the chip, the barrier layer having a barrier layer thermal conductivity greater than a semiconductor material thermal conductivity;a thermally conductive layer deposited upon at least a portion of the barrier layer, the thermally conductive layer having a thermal conductivity greater than a semiconductor material thermal conductivity; anda plurality of through-silicon vias (TSVs) electrically connected to the plurality of active devices, extending from the back side to an active device side of the chip and configured to remove, by conduction from the active devices to the back side, heat from the chip.
地址 Armonk NY US