Silicon part for plasma etching apparatus and method of producing the same

摘要

The present invention relates to a silicon part and a method of producing the silicon part. The silicon part is not worn quickly and particle formation is suppressed even if it is positioned in the reaction chamber of a plasma etching apparatus. The silicon part for the plasma etching apparatus is made of any one selected from a group consisting of poly-crystalline silicon, mono-like silicon, and single-crystalline silicon. Also, the silicon part includes boron as a dopant in a range from 1×1018 atoms/cc or higher to 1×1020 atoms/cc or lower.

主权项

1. A silicon part, which is used for a plasma etching apparatus and used in a reaction chamber of the plasma etching apparatus, wherein
the silicon part is made of any one selected from the group consisting of poly-crystalline silicon and mono-like silicon, the silicon part includes boron as a dopant in a range from 1×1018 atoms/cc or higher to 1×1020 atoms/cc or lower, and a nitrogen concentration in the silicon part is in a range from 7×1014 atoms/cc or higher to 4×1015 atoms/cc or lower wherein a percentage of crystal orientation distribution in a (111) area is 70% or more, the percentage of crystal orientation distribution in a (111) area being obtained by measuring crystal orientation on a surface of the silicon part by an EBSD method to obtain crystal orientation distribution in a stereographic triangle whose vertexes correspond to crystal surfaces (001), (101), and (111), splitting the stereographic triangle into a (001) area, (101) area, and the (111) area with lines connecting midpoints of each side and a centroid of the stereographic triangle, and dividing a number of measured points in each area by a total number of measured points to obtain percentages of crystal orientation in each area.