发明名称 Method of repairing a memory device and method of booting a system including the memory device
摘要 A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, includes repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region, repairing the normal memory region by performing at least one of excluding second fault memory units from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units.
申请公布号 US9472305(B2) 申请公布日期 2016.10.18
申请号 US201414534492 申请日期 2014.11.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Choo Min-Yeab;Jung Bu-Il;Kim Do-Geun;Park Mi-Kyoung;Lee Dong-Yang;Lim Sun-Young;Jung Ju-Yun;Han Hyuk
分类号 G11C29/04;G11C29/00 主分类号 G11C29/04
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, the method comprising: repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region is completed, repairing the normal memory region by performing at least one of excluding second fault memory units of the normal memory region from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units, each of the second fault memory units having at least one fault memory cell.
地址 Gyeonggi-Do KR