| 发明名称 | Three-dimensional flash memory system | ||
| 摘要 | A three-dimensional flash memory system is disclosed. | ||
| 申请公布号 | US9472284(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201213680719 | 申请日期 | 2012.11.19 |
| 申请人 | Silicon Storage Technology, Inc. | 发明人 | Tran Hieu Van;Nguyen Hung Quoc;Reiten Mark |
| 分类号 | G11C11/34;G11C16/06;G11C5/02;G11C5/06;G11C16/30;G11C29/26;G11C16/04;G11C16/26;G11C7/04;G11C29/02;G11C29/12;H01L25/065;H01L25/18 | 主分类号 | G11C11/34 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. A memory apparatus, comprising: a first die comprising a first array of flash memory cells; a first control circuit for generating sectors of a first size with the first array; a second die comprising a second array of flash memory cells; a second control circuit for generating sectors of a second size different than the first size within the second array; and a plurality of TSV connections between the first die and second die. | ||
| 地址 | San Jose CA US | ||