High performance heat shields with reduced capacitance

摘要

Methods and structures for capacitively isolating a heat shield from a handle wafer of a silicon-on-insulator substrate. A contact plug is located in a trench extending through a trench isolation region in a device layer of the silicon-on-insulator substrate and at least partially through a buried insulator layer of the silicon-on-insulator substrate. The heat shield is located in an interconnect structure, which also includes a wire coupling the heat shield with the contact plug. An isolation structure is positioned between the contact plug and a portion of the handle wafer. The isolation structure provides the capacitive isolation.

主权项

1. A structure formed using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer, the structure comprising:
a trench isolation region in the device layer; a contact plug in a trench extending through the trench isolation region and at least only partially through the buried insulator layer; an interconnect structure including a heat shield and a first wire coupling the heat shield with the contact plug; and an isolation structure between the contact plug and a portion of the handle wafer, wherein the isolation structure capacitively isolates the heat shield from the handle wafer, and the isolation structure comprises a portion of the buried insulator layer between the contact plug and the handle wafer.