Memory device and method for fabricating the same

摘要

Provided is a memory device including a stack structure, a plurality of first cap layers, and a plurality of second cap layers. The stack structure is located on a substrate. The stack structure includes a plurality of first conductive layers and a plurality of dielectric layers. The first conductive layers and the dielectric layers are stacked alternately. The first cap layers are located on sidewalls of the first conductive layers respectively. The second cap layers are located on sidewalls of the dielectric layers respectively.

主权项

1. A memory device, comprising:
a plurality of stack structures, located on a substrate, wherein each of the plurality of stack structures comprises a plurality of first conductive layers and a plurality of dielectric layers alternately stacked with respect to each other, and each of the adjacent stack structures are separated by an opening; a plurality of first cap layers, respectively located on sidewalls of the first conductive layers; a plurality of second cap layers, respectively located on sidewalls of the dielectric layers; a second conductive layer, extends continuously along a second direction to cover the stack structure; and a charge storage layer, located between the substrate and the second conductive layer, and between the stack structure and the second conductive layer, wherein the charge storage layer covers sidewalls and top surfaces of the plurality of stack structures and bottoms of the openings to isolate the second conductive layer and the plurality of stack structures, and isolate the second conductive layer and the substrate, wherein each of the plurality of stack structures extends along a first direction, the plurality of stack structures and a plurality of openings are alternately arranged along the second direction, each of the plurality of openings extends along the first direction, and the first and second directions are different.