Detection and localization of failures in 3D NAND flash memory

摘要

A method includes, in a memory block, which includes at least a string of memory cells that is selectable using at least a select transistor, sensing a current flowing through the string. A failure in the memory block, which causes the string to conduct even when unselected using the select transistor, is detected based on the sensed current. A corrective action is initiated in response to the identified failure.

主权项

1. An apparatus, comprising:
a memory, comprising multiple memory blocks, each memory block comprising multiple strings of memory cells, wherein each string is selectable using at least a respective select transistor; and control circuitry, which is configured to sense a current flowing through a given string in a given memory block of the memory, to detect, based on the sensed current, a failure in the given memory block that causes the given string to conduct even when the given string is unselected using the respective select transistor, and to initiate a corrective action in response to the identified failure in the given memory block.