发明名称 Field memory device functioning as a variable stage shift register with gated feedback from its output to its input
摘要 A memory device having an addressing unit for addressing different values as addresses for input/output of data for each clock input during one cycle, and a memory inputting data at different designated addresses and cyclically outputting stored data. The memory device provides the operation of a shift register which is capable of determining the number of stages in accordance with the content of the addressing. By employing a memory which effects read-modify-write operations and by delivering input data obtained by the feedback of output data to this memory, the memory device can repeatedly output the same data. The memory device has a switch circuit operative in a first position for connecting an output of the memory to an input of the memory and in a second position for connecting the input of the memory to an external data source.
申请公布号 US5270981(A) 申请公布日期 1993.12.14
申请号 US19910664477 申请日期 1991.03.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUMI, MASAHIKO
分类号 G06F5/16;G06F7/78;G11C8/04;(IPC1-7):G11C19/00;G11C21/00 主分类号 G06F5/16
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